RJP65T43DPM-00#T1

Renesas Electronics
968-RJP65T43DPM-00T1
RJP65T43DPM-00#T1

Mfr.:

Description:
IGBTs POWER TRS1

Lifecycle:
Restricted Availability:
This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
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In Stock: 4

Stock:
4 Can Dispatch Immediately
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (DKK)

Qty. Unit Price
Ext. Price
95,56 kr. 95,56 kr.
92,80 kr. 928,00 kr.
66,54 kr. 1.996,20 kr.
55,43 kr. 3.325,80 kr.
48,42 kr. 5.810,40 kr.

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: IGBTs
RoHS:  
Si
TO-3PFM
Through Hole
Single
650 V
1.8 V
- 20 V, 20 V
40 A
68.8 W
+ 175 C
Tube
Brand: Renesas Electronics
Continuous Collector Current Ic Max: 20 A
Gate-Emitter Leakage Current: 1 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

RJP65T43DPM High Speed Switching IGBT

Renesas Electronics RJP65T43DPM High Speed Switching IGBT is a 650V, 20A IGBT with a 20kHz to 100kHz operating frequency range. This IGBT offers low collector-to-emitter saturation voltage and comes in a TO-3PFM package. The RJP65T43DPM IGBT features a 150A collector peak current, 68.8W collector dissipation, and 175°C junction temperature. This IGBT is stored in the -55°C to 150°C temperature range, and typical applications include Power Factor Correction (PFC).

FEATURED PRODUCTS
RENESAS ELECTRONICS