MMBT3904T RSG

Taiwan Semiconductor
821-MMBT3904TRSG
MMBT3904T RSG

Mfr.:

Description:
Bipolar Transistors - BJT 60V, 0.2A, NPN Bipolar Transistor

ECAD Model:
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In Stock: 5.709

Stock:
5.709 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
1,35 kr. 1,35 kr.
0,806 kr. 8,06 kr.
0,507 kr. 50,70 kr.
0,373 kr. 186,50 kr.
0,328 kr. 328,00 kr.
Full Reel (Order in multiples of 3000)
0,261 kr. 783,00 kr.
0,239 kr. 1.434,00 kr.
0,194 kr. 1.746,00 kr.
0,187 kr. 4.488,00 kr.

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-523-3
NPN
Single
200 mA
40 V
60 V
6 V
300 mV
150 mW
- 55 C
+ 150 C
Reel
Cut Tape
Brand: Taiwan Semiconductor
Continuous Collector Current: 200 mA
DC Collector/Base Gain hFE Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.