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SQS174ELNW-T1_GE3

Name: Vishay SQS174ELNW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS174ELNW-T1_GE3
Price: 11.86 DKK
Availability: InStock

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Mouser No:

78-SQS174ELNW-T1_GE3

Mfr. No:

SQS174ELNW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 72-V (D-S) 175C MOSFET

Datasheet:

SQS174ELNW-T1_GE3 Datasheet

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In Stock: 2.173

Stock:: 2.173 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	11,86 kr.	11,86 kr.
	7,53 kr.	75,30 kr.
	5,01 kr.	501,00 kr.
	4,10 kr.	2.050,00 kr.
	4,01 kr.	4.010,00 kr.
Full Reel (Order in multiples of 3000)
	3,40 kr.	10.200,00 kr.
	3,37 kr.	30.330,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8SLW
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	72 V
Id - Continuous Drain Current:	87 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	103 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	17 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

SQS174ELNW-T1_GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.