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TPN2R304PL,L1Q

Name: Toshiba TPN2R304PL,L1Q
Brand: Toshiba
SKU: 757-TPN2R304PLL1Q
Price: 8.65 DKK
Availability: InStock

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See Product Specifications

Mouser No:

757-TPN2R304PLL1Q

Mfr. No:

TPN2R304PL,L1Q

Mfr.:

Toshiba

Description:

MOSFETs 40 Volt N-Channel

Datasheet:

TPN2R304PL,L1Q Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TPN2R304PL,L1Q

In Stock: 38.003

Stock:: 38.003 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	8,65 kr.	8,65 kr.
	5,44 kr.	54,40 kr.
	3,60 kr.	360,00 kr.
	2,81 kr.	1.405,00 kr.
	2,39 kr.	2.390,00 kr.
	2,35 kr.	5.875,00 kr.
Full Reel (Order in multiples of 5000)
	2,23 kr.	11.150,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-Advance-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	12.2 ns
Product Type:	MOSFETs
Rise Time:	7.8 ns
Series:	TPN2R304PL
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	17.5 ns
Unit Weight:	20 mg

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Datasheet

TPN2R304PL,L1Q Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.