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IGC033S10S1XTMA1

Name: Infineon IGC033S10S1XTMA1
Brand: Infineon Technologies
SKU: 726-IGC033S10S1XTMA1
Price: 27.23 DKK
Availability: InStock

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Mouser No:

726-IGC033S10S1XTMA1

Mfr. No:

IGC033S10S1XTMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs MV GAN DISCRETES

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGC033S10S1XTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IGC033S10S1XTMA1

In Stock: 1.225

Stock:: 1.225

Can Dispatch Immediately

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On Order:: 10.000

Expected 23/02/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	27,23 kr.	27,23 kr.
	18,58 kr.	185,80 kr.
	14,70 kr.	1.470,00 kr.
	12,46 kr.	6.230,00 kr.
	11,94 kr.	11.940,00 kr.
Full Reel (Order in multiples of 5000)
	10,07 kr.	50.350,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-TSON-6
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	76 A
Rds On - Drain-Source Resistance:	3.3 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 5.5 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Packaging:	Reel
Packaging:	Cut Tape
Product:	Tranistors
Product Type:	GaN FETs
Series:	100V G3
Factory Pack Quantity:	5000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 P-Channel
Type:	CoolGaN Transistor
Part # Aliases:	IGC033S10S1 SP005751571

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Datasheet

IGC033S10S1XTMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ G3 Transistors

Infineon Technologies CoolGaN™ G3 Transistors are designed to deliver superior performance in high-power density applications. These transistors feature a very low on-state resistance, enabling efficient power conversion and reduced energy losses. Available in four voltage options (60V, 80V, 100V, or 120V), the Infineon CoolGaN G3 Transistors deliver ultra-fast switching with an ultra-low gate/output charge. The transistors are housed in compact PQFN packages, which enhance thermal management and support dual-side cooling, ensuring reliable operation even under demanding conditions. These features make CoolGaN G3 Transistors a top choice for applications such as telecom, data center power supplies, and industrial power systems.

CoolGaN™ 100V G3 Transistors

Infineon Technologies CoolGaN™ 100V G3 Transistors are normally OFF, enhancement-mode (e-mode) power transistors in compact housing. These transistors feature low on-state resistance, making the devices an ideal choice for reliable performance in demanding high-current and high-voltage applications. The CoolGaN transistors are designed to improve thermal management. Typical applications include audio amplifier solutions, photovoltaic, telecommunication infrastructure, e‑Mobility, robotics, and drones.