GP3T020A120H

SemiQ
148-GP3T020A120H
GP3T020A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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More Information
Learn more about SemiQ GP3T020A120H

In Stock: 55

Stock:
55
Can Dispatch Immediately
On Order:
60
Expected 18/02/2026
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
74,60 kr. 74,60 kr.
45,28 kr. 452,80 kr.
38,64 kr. 4.636,80 kr.
37,90 kr. 19.329,00 kr.

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
280 A
25 mOhms
- 4.5 V, + 18 V
4 V
234 nC
- 55 C
+ 175 C
429 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 18 ns
Forward Transconductance - Min: 24 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 25 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 59 ns
Typical Turn-On Delay Time: 19 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

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