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PMDXB550UNEZ

Name: Nexperia PMDXB550UNEZ
Brand: Nexperia
SKU: 771-PMDXB550UNEZ
Price: 3.4 DKK
Availability: OutOfStock

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See Product Specifications

Mouser No:

771-PMDXB550UNEZ

Mfr. No:

PMDXB550UNEZ

Mfr.:

Nexperia

Description:

MOSFETs SOT1216 2NCH 30V .59A

Datasheet:

PMDXB550UNEZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB550UNEZ

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 140.000

Expected 08/02/2027
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,40 kr.	3,40 kr.
	2,07 kr.	20,70 kr.
	1,32 kr.	132,00 kr.
	0,985 kr.	492,50 kr.
	0,806 kr.	806,00 kr.
	0,798 kr.	1.995,00 kr.
Full Reel (Order in multiples of 5000)
	0,694 kr.	3.470,00 kr.
	0,612 kr.	6.120,00 kr.
	0,604 kr.	15.100,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1010-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	590 mA
Rds On - Drain-Source Resistance:	670 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	1.05 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	4.03 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	3 ns
Forward Transconductance - Min:	600 mS
Product Type:	MOSFETs
Rise Time:	7 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	4 ns
Part # Aliases:	934069326147
Unit Weight:	1,290 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

PMDXB550UNE Dual N-Channel MOSFET

Nexperia PMDXB550UNE Dual N-Channel MOSFET is a surface mount device that offers a low threshold voltage. This 30V enhancement mode Field-Effect Transistor (FET) features exposed drain pad for an excellent thermal conduction and ESD protection. Typical applications include relay driver, high-speed line driver, low-side load switch, and switching circuits. The PMDXB550UNE MOSFET is designed using Trench MOSFET technology and is available in a leadless ultra-small DFN1010B-6 (SOT1216) plastic package.