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SIA469DJ-T1-GE3

Name: Vishay SIA469DJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIA469DJ-T1-GE3
Price: 3.78 DKK
Availability: InStock

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Mouser No:

78-SIA469DJ-T1-GE3

Mfr. No:

SIA469DJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -30V Vds 20V Vgs PowerPAK SC-70

Datasheet:

SIA469DJ-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SIA469DJ-T1-GE3

In Stock: 102.985

Stock:: 102.985 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,78 kr.	3,78 kr.
	2,34 kr.	23,40 kr.
	1,50 kr.	150,00 kr.
	1,13 kr.	565,00 kr.
	1,00 kr.	1.000,00 kr.
Full Reel (Order in multiples of 3000)
	0,858 kr.	2.574,00 kr.
	0,783 kr.	4.698,00 kr.
	0,671 kr.	6.039,00 kr.
	0,656 kr.	15.744,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15.6 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	15 ns
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	45,597 mg

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Datasheet

SIA469DJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

SiA469DJ 30V P-Channel TrenchFET® Gen III MOSFET

Vishay / Siliconix SiA469DJ 30V P-Channel TrenchFET® Gen III MOSFET provides low on-resistance in a single-configuration PowerPAK® SC-70 package size. The SiA469DJ MOSFET operates in a -55°C to +150°C temperature range. Vishay / Siliconix SiA469DJ 30V P-Channel TrenchFET Gen III MOSFET is RoHS compliant and halogen free. Typical applications include load switches, DC/DC converters, high-speed switching, and power management in battery-operated, mobile, and wearable devices.

Industrial Power Solutions

Vishay Industrial Power Solutions feature a broad selection of semiconductor and passive components for industrial power supply applications. These products offer access to advanced technology and reliable components essential for creating robust, durable, and efficient industrial products. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen III P-Channel Power MOSFETs

Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs feature low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes, including micro-foot, PowerPAK®, and TSOP-6. Vishay / Siliconix TrenchFET® Gen III P-Channel Power MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Typical applications include load switches, adapter switches, battery switches, DC motors, and charger switches.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.