TGA2237 Wideband Distributed Amplifier

Qorvo TGA2237 Wideband Distributed Amplifier is fabricated on the Qorvo production 0.25um Gallium-Nitride (GaN) on Silicon Carbide (SiC) process. The TGA2237 operates from 0.03GHz to 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 50.% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 amplifier is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain Type Mounting Style Package/Case Technology P1dB - Compression Point Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Qorvo RF Amplifier .03-2.5GHz 10W GaN Sm Sig. Gain 19dB Non-Stocked Lead-Time 20 Weeks
Min.: 25
Mult.: 25

2.5 GHz 30 V 360 mA 19 dB Power Amplifiers SMD/SMT Die GaN 32 dBm TGA2237 Gel Pack
Qorvo RF Amplifier 30-2500MHz 10W GaN PAE > 50% Gain 19dB Non-Stocked Lead-Time 16 Weeks
Min.: 25
Mult.: 25

30 MHz to 2.5 GHz 32 V 360 mA 19 dB Power Amplifiers SMD/SMT QFN-32 GaN SiC 33 dBm - 40 C + 85 C TGA2237 Waffle