VSLY850 High Speed IR Emitting Diodes

Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology. Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes have extreme high radiant intensity, high optical power, high speed, and are molded in clear, untinted plastic packages. The VSLY3850 comes in a T-1 plastic package, and the VSLY5850 also has a parabolic lens.

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Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
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Vishay Semiconductors Infrared Emitters 850nm,T-1.75 600mW/sr,+/-3deg.
Datasheet
9.261In Stock
Min.: 1
Mult.: 1

Through Hole 850 nm 600 mW/sr 3 deg 100 mA 1.65 V 190 mW - 40 C + 85 C Bulk
Vishay Semiconductors Infrared Emitters 850nm, T-1 70mW/sr, +/-18deg.
Datasheet
6.924In Stock
Min.: 1
Mult.: 1

Through Hole 850 nm 70 mW/sr 18 deg 100 mA 1.65 V 190 mW - 40 C + 85 C Bulk