NSVMSD1819A-RT1G

onsemi
863-NSVMSD1819A-RT1G
NSVMSD1819A-RT1G

Mfr.:

Description:
Bipolar Transistors - BJT SS SC70 GP XSTR NPN 50V

Datasheet:
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In Stock: 11.376

Stock:
11.376 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
1,73 kr. 1,73 kr.
1,51 kr. 15,10 kr.
1,13 kr. 113,00 kr.
0,701 kr. 350,50 kr.
0,545 kr. 545,00 kr.
Full Reel (Order in multiples of 3000)
0,321 kr. 963,00 kr.
0,283 kr. 1.698,00 kr.
0,239 kr. 2.151,00 kr.
0,201 kr. 4.824,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SC-70-3
NPN
Single
200 mA
60 V
60 V
7 V
500 mV
150 mW
+ 150 C
MSD1819A-R
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 100 mA
DC Current Gain hFE Max: 340
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

Datasheet

TARIC:
8541210000
USHTS:
8541210095
ECCN:
EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.

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