BUK7Q N-Channel MOSFET in MLPAK33-WF Package

Nexperia BUK7Q N-Channel MOSFETs in an MLPAK33-WF Package (SOT8002-3D) use Trench 9 technology. Qualified to meet AEC-Q101 requirements at 175°C, they offer a small footprint for compact designs. Nexperia BUK7Q has side-wettable flanks that provide robust solder joints and automated optical inspection.

Results: 5
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Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Nexperia MOSFETs BUK7Q4R9-40H/SOT8002 /MLPAK33
Datasheet
750In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 40 V 70 A 4.9 mOhms 20 V 3.6 V 29 nC - 55 C + 175 C 84 W Enhancement Reel, Cut Tape
Nexperia MOSFETs BUK7Q6R0-40H/SOT8002 /MLPAK33
Datasheet
744In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 40 V 73 A 6 mOhms 20 V 3.6 V 22 nC - 55 C + 175 C 65 W Enhancement Reel, Cut Tape
Nexperia MOSFETs BUK7Q7R5-40H/SOT8002 /MLPAK33
Datasheet
750In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 40 V 55 A 7.5 mOhms 20 V 3.6 V 17 nC - 55 C + 175 C 53 W Enhancement Reel, Cut Tape
Nexperia MOSFETs BUK7Q8R4-40H/SOT8002/MLPAK33
Datasheet
450In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT MLPAK33-WF-8 N-Channel 1 Channel 40 V 57 A 8.4 mOhms - 20 V, 20 V 3.6 V 16 nC - 55 C + 175 C 51 W Enhancement Reel, Cut Tape
Nexperia MOSFETs BUK7Q9R5-40H/SOT8002/MLPAK33
Datasheet
433In Stock
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT MLPAK33-WF-8 N-Channel 1 Channel 40 V 51 A 9.5 mOhms - 20 V, 20 V 3.6 V 14 nC - 55 C + 175 C 47 W Enhancement Reel, Cut Tape