NVHL080N120SC1A

onsemi
863-NVHL080N120SC1A
NVHL080N120SC1A

Mfr.:

Description:
SiC MOSFETs SIC MOS TO247-3L 80MOHM 1200V

Datasheet:
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Availability

Stock:
1 Can Dispatch in 20 Days
Minimum: 1   Multiples: 1
Unit Price:
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Pricing (DKK)

Qty. Unit Price
Ext. Price
67,89 kr. 67,89 kr.
40,73 kr. 407,30 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
AEC-Q101
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 13 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 20 ns
Series: NVHL080N120SC1A
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip sizes, ensuring low capacitance and gate charge. The EliteSiC N-Channel MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L/TO247-3LD packages. The NVHL080N120SC1 and NVHL080N120SC1A MOSFETs are qualified for automotive according to AEC-Q101 grade certification.

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