NTMFS3D0N08XT1G

onsemi
863-NTMFS3D0N08XT1G
NTMFS3D0N08XT1G

Mfr.:

Description:
MOSFETs T10 80V STD NCH MOSFET SO8FL

ECAD Model:
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In Stock: 98

Stock:
98
Can Dispatch Immediately
On Order:
9.000
Expected 23/10/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
17,16 kr. 17,16 kr.
10,97 kr. 109,70 kr.
7,45 kr. 745,00 kr.
6,21 kr. 3.105,00 kr.
5,20 kr. 5.200,00 kr.
Full Reel (Order in multiples of 1500)
5,20 kr. 7.800,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8
N-Channel
1 Channel
80 V
154 A
2.6 mOhms
- 20 V, 20 V
3.6 V
28 nC
- 55 C
+ 175 C
133 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 6 ns
Forward Transconductance - Min: 115 S
Product Type: MOSFETs
Rise Time: 8 ns
Series: NTMFS3D0N08X
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 24 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTMFS3D0N08X Single N-Channel Power MOSFET

onsemi NTMFS3D0N08X Single N-Channel Power MOSFET is an 80V T10 standard gate MOSFET ideal for Cloud power, 5G Telecom, and other PSU applications, as well as DC/DC and industrial applications. NTMFS3D0N08X provides better performance with improved system efficiency and high power density with below-performance features. This MOSFET provides improved overall efficiency, improved switching losses, reduced ringing/overshoot/noise, and improved Avalanche ruggedness in fast-switching applications.