IRFB4620PBFXKMA1

Name: Infineon IRFB4620PBFXKMA1
Brand: Infineon Technologies
SKU: 726-IRFB4620PBFXKMA1
Price: 6.41 DKK
Availability: Discontinued

Mouser No:

726-IRFB4620PBFXKMA1

Mfr. No:

IRFB4620PBFXKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IR FET >60-400V

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IRFB4620PBFXKMA1 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	72.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	144 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	14.8 ns
Forward Transconductance - Min:	37
Product Type:	MOSFETs
Rise Time:	22.4 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25.4 ns
Typical Turn-On Delay Time:	13.4 ns
Part # Aliases:	IRFB4620PBFXKMA1 SP005745529

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Datasheet

IRFB4620PBFXKMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United Kingdom
Assembly Country of Origin:: China
Country of Diffusion:: United Kingdom

The country is subject to change at the time of shipment.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.