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CGHV59070F

Name: MACOM CGHV59070F
Brand: MACOM
SKU: 941-CGHV59070F
Price: 4485.92 DKK
Availability: InStock

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Mouser No:

941-CGHV59070F

Mfr. No:

CGHV59070F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt

Datasheet:

CGHV59070F Datasheet (PDF)

ECAD Model:

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Learn more about MACOM CGHV59070F

In Stock: 84

Stock:: 84 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	4.485,92 kr.	4.485,92 kr.
	3.936,64 kr.	39.366,40 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Package/Case:	440224
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	6.3 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	14 dB
Maximum Operating Frequency:	5.9 GHz
Minimum Operating Frequency:	4.4 GHz
Output Power:	76 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	7,797 g

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Datasheet

CGHV59070F Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

CGHV59070 70W RF Power GaN HEMT

MACOM CGHV59070 RF Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides a general-purpose, broadband solution to a variety of RF and microwave applications. Operating from a 50V rail, the module delivers high efficiency, high gain, and wide bandwidth capabilities. This 70W internally matched GaN HEMT is ideal for linear and compressed amplifier circuits. MACOM CGHV59070 70W RF Power GaN HEMT is offered in a 440224 package.