QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN 209In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 700 mA - 2.8 V - 40 C + 85 C 17.5 W
Qorvo GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN 29In Stock
Min.: 1
Mult.: 1

Screw Mount NI-360 N-Channel 50 V 4 A - 2.8 V - 40 C + 85 C 127 W
Qorvo GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN
75Expected 28/09/2026
Min.: 1
Mult.: 1

Screw Mount NI-360 N-Channel 50 V 2.5 A - 2.8 V - 40 C + 85 C 64 W
Qorvo GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
19Expected 28/09/2026
Min.: 1
Mult.: 1

SMD/SMT NI-360 N-Channel 50 V 4 A - 2.8 V - 40 C + 85 C 127 W
Qorvo GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN 25In Stock
Min.: 1
Mult.: 1

SMD/SMT NI-360 N-Channel 50 V 2.5 A - 2.8 V - 40 C + 85 C 64 W
Qorvo GaN FETs DC-2.7GHz 150W PAE 64.8% Non-Stocked Lead-Time 20 Weeks
Min.: 100
Mult.: 100
: 100

SMD/SMT DFN-6 N-Channel 1.7 A - 40 C + 85 C 67 W