LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs

Texas Instruments LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs include an integrated driver and protection for switch-mode power converters. The LMG3522R030/LMG3522R030-Q1 integrates a silicon driver that allows switching speeds up to 150V/ns. The device implements TI’s integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, supplies clean switching and minimal ringing in hard-switching power supply topologies. An adjustable gate drive strength permits control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Type
Mounting Style
Package/Case
Number of Drivers
Number of Outputs
Output Current
Supply Voltage - Min
Supply Voltage - Max
Configuration
Rise Time
Fall Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Texas Instruments Gate Drivers Automotive 650-V 30- m? GaN FET with int
Datasheet
280In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 250

SMD/SMT VQFN-52 2.8 ns 22 ns - 40 C + 150 C LMG3522R030 Reel, Cut Tape, MouseReel
Texas Instruments Gate Drivers Automotive 650-V 30- m? GaN FET with int
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 2.000
Mult.: 2.000
Reel: 2.000

Power Switch ICs High Side Switch SMD/SMT VQFN-52 1 Output 50 mA 7.5 V 18 V - 40 C + 125 C LMG3522R030 Reel
Texas Instruments Gate Drivers 650-V 30-m? GaN FET with integrated driv
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 2.000
Mult.: 2.000
Reel: 2.000
Driver ICs - Various Half-Bridge SMD/SMT VQFN-52 1 Driver 1 Output 7.5 V 18 V Non-Inverting 4.3 ns 22 ns - 40 C + 125 C LMG3522R030 Reel