LMG2100R044RARR

Texas Instruments
595-LMG2100R044RARR
LMG2100R044RARR

Mfr.:

Description:
Gate Drivers 100-V 4.4-m? half-br idge GaN FET with i

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 5.182

Stock:
5.182 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
58,41 kr. 58,41 kr.
39,99 kr. 399,90 kr.
31,93 kr. 3.193,00 kr.
28,80 kr. 28.800,00 kr.
Full Reel (Order in multiples of 2500)
27,98 kr. 69.950,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
SMD/SMT
VQFN-FCRLF-16
- 40 C
+ 125 C
LMG2100R044
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
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CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG2100R044 GaN Half-Bridge Power Stage

Texas Instruments LMG2100R044 GaN Half-Bridge Power Stage is a 90V continuous, 100V pulsed, 35A half-bridge power stage with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The LMG2100R044 combines two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. The GaN FETs offer significant advantages for power conversion, such as zero reverse recovery and minimal input capacitance CISS and output capacitance COSS.