CGHV40200PP

MACOM
941-CGHV40200PP
CGHV40200PP

Mfr.:

Description:
GaN FETs GaN HEMT DC-2.5GHz, 180 Watt

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In Stock: 45

Stock:
45 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
3.868,38 kr. 3.868,38 kr.
3.412,35 kr. 34.123,50 kr.

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
Screw Mount
440199
N-Channel
150 V
8.7 A
- 3 V
- 40 C
+ 150 C
166 W
Brand: MACOM
Configuration: Single
Development Kit: CGHV40200PP-AMP1
Gain: 16.1 dB
Maximum Operating Frequency: 1.9 GHz
Minimum Operating Frequency: 1.7 GHz
Output Power: 250 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
3A001.b.3.a.4

CGHV40200PP GaN HEMT

MACOM CGHV40200PP Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) operates from a 50V rail and offers a broadband solution to RF and microwave applications. This transistor provides high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. MACOM CGHV40200PP GaN HEMT is available in a 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.