GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Switch Configuration Minimum Frequency Maximum Frequency Insertion Loss Off Isolation - Typ Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Technology Series Packaging
Qorvo RF Switch ICs 5-6000MHz SPDT IL .25dB Iso 39dB 3.548In Stock
2.500Expected 27/07/2026
Min.: 1
Mult.: 1
Max.: 750
: 2.500

SPDT 5 MHz 6 GHz 0.46 dB 29 dB - 40 C + 105 C SMD/SMT LGA-9 Si QPC1022 Reel, Cut Tape, MouseReel
Qorvo RF Switch ICs 50W, 0.15-2.8GHz GaN SP3T Non-Stocked Lead-Time 24 Weeks
Min.: 100
Mult.: 100
: 100

SP3T 150 MHz 2.8 GHz 0.3 dB to 1 dB 30 dB + 275 C SMD/SMT QFN-24 GaN QPC1006 Reel