IPP016N08NF2SAKMA1

Infineon Technologies
726-IPP016N08NF2SAKM
IPP016N08NF2SAKMA1

Mfr.:

Description:
MOSFETs IFX FET > 60-80V

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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.000
Expected 28/05/2026
1.000
Expected 02/07/2026
Factory Lead Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
29,77 kr. 29,77 kr.
19,69 kr. 196,90 kr.
15,37 kr. 1.537,00 kr.
13,65 kr. 6.825,00 kr.
11,71 kr. 11.710,00 kr.
11,04 kr. 22.080,00 kr.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
Si
Through Hole
N-Channel
1 Channel
80 V
196 A
1.6 mOhms
- 20 V, 20 V
3.8 V
170 nC
- 55 C
+ 175 C
300 W
Enhancement
Tube
Brand: Infineon Technologies
Product Type: MOSFETs
Factory Pack Quantity: 1000
Subcategory: Transistors
Part # Aliases: IPP016N08NF2S SP005548844
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

MOSFETs for General Purpose Applications

Infineon Technologies MOSFETs for General Purpose Applications offer simple and price-competitive solutions with a wide availability and established quality. This portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs, and products for smaller power handling (single and dual N- and P-channel MOSFETs). The selected parts come in a wide range of packages including SOT-23, PQFN 2x2, PQFN 3x3, DPAK, SO-8, SuperSO8 5x6, and TO220. These products address a broad range of general-purpose applications like adapters, chargers, battery-powered applications, motor control and drives, battery management systems, inverters, computing, and mobile applications.

StrongIRFET™ 2 Power MOSFETs

Infineon Technologies StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, and 100% avalanche tested MOSFETs. The Infineon StrongIRFET 2 MOSFETs are optimized for a wide range of applications. The MOSFETs offer a VDS range of 80V to 100V and an RDS(on) from 2.4mΩ to 8.2mΩ.