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FDC642P-F085PBK

Name: onsemi FDC642P-F085PBK
Brand: onsemi
SKU: 863-FDC642P-F085PBK
Price: 3.14 DKK
Availability: InStock

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Mouser No:

863-FDC642P-F085PBK

Mfr. No:

FDC642P-F085PBK

Mfr.:

onsemi

Description:

MOSFETs PMOS SSOT6 20V 65 MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FDC642P-F085PBK Datasheet (PDF)

ECAD Model:

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In Stock: 2.100

Stock:: 2.100 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	3,14 kr.	3,14 kr.
	1,98 kr.	19,80 kr.
	1,60 kr.	160,00 kr.
	1,53 kr.	765,00 kr.
	1,49 kr.	1.490,00 kr.
Full Reel (Order in multiples of 3000)
	1,45 kr.	4.350,00 kr.
	1,37 kr.	8.220,00 kr.
	1,25 kr.	11.250,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SSOT-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	6.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	5.5 ns
Series:	FDC642P_F085
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	23.2 ns
Typical Turn-On Delay Time:	7.3 ns

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Datasheet

FDC642P-F085PBK Datasheet (PDF)

TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

FDC642P-F085 Small Signal MOSFET

onsemi FDC642P-F085 Small Signal MOSFET offers a high-performance trench technology for extremely low R_DS(on)and fast switching speed. This MOSFET features a typical low gate charge of 6.9nC, a drain-to-source voltage of -20V, a gate-to-source voltage of ±8V, and a power dissipation of 1.2W. The FDC642P-F085 small signal MOSFET is available in a SUPERSOT™-6 package, featuring a 72% smaller footprint than the standard SO-8 and a 1mm thick, low-profile design. This small-signal MOSFET is Pb-free, RoHS compliant, AEC-Q101 qualified, and PPAP capable. Typical applications include a load switch, battery protection, and power management.