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SIS176LDN-T1-GE3

Name: Vishay SIS176LDN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIS176LDN-T1-GE3
Price: 8.88 DKK
Availability: InStock

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See Product Specifications

Mouser No:

78-SIS176LDN-T1-GE3

Mfr. No:

SIS176LDN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAK1212 N-CH 70V 12.9A

Datasheet:

SIS176LDN-T1-GE3 Datasheet

ECAD Model:

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In Stock: 763

Stock:: 763

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On Order:: 12.000

Expected 19/03/2026

12.000

Expected 14/01/2027
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	8,88 kr.	8,88 kr.
	5,65 kr.	56,50 kr.
	3,83 kr.	383,00 kr.
	3,07 kr.	1.535,00 kr.
	2,78 kr.	2.780,00 kr.
Full Reel (Order in multiples of 3000)
	2,45 kr.	7.350,00 kr.
	2,39 kr.	14.340,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	70 V
Id - Continuous Drain Current:	42.3 A
Rds On - Drain-Source Resistance:	10.9 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	12.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	39 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SIS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

SIS176LDN-T1-GE3 Datasheet

PCN

Product Change Notification (PDF)

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.

SiS176LDN N-Channel 70V (D-S) MOSFETs

Vishay / Siliconix SiS176LDN N-Channel 70V (D-S) MOSFETs utilize TrenchFET® Gen IV power MOSFET technology. The SiS176LDN MOSFETs feature very low R_DS Q_g figure-of-merit (FOM) and are tuned for the lowest R_DS Q_oss FOM. The Vishay / Siliconix SiS176LDN N-Channel 70V (D-S) MOSFETs are ideal for synchronous rectification, primary-side switch, DC/DC converter, and motor drive switch applications.