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RH7E04BBJFRATCB

Name: ROHM Semiconductor RH7E04BBJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7E04BBJFRATCB
Price: 14.85 DKK
Availability: InStock

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Mouser No:

755-RH7E04BBJFRATCB

Mfr. No:

RH7E04BBJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN8 P-CH 30V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7E04BBJFRATCB Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RH7E04BBJFRATCB

In Stock: 2.400

Stock:: 2.400 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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-,-- kr.

Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	14,85 kr.	14,85 kr.
	9,47 kr.	94,70 kr.
	6,61 kr.	661,00 kr.
	5,57 kr.	2.785,00 kr.
	4,95 kr.	4.950,00 kr.
Full Reel (Order in multiples of 3000)
	4,21 kr.	12.630,00 kr.
	4,16 kr.	24.960,00 kr.
	4,13 kr.	37.170,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	105 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	160 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

RH7E04BBJFRATCB Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RH7E04BBJFRA -30V P-Channel Power MOSFET

ROHM Semiconductor RH7E04BBJFRA -30V P-Channel Power MOSFET is a -30V drain-source voltage (V_DSS) and ±40A drain current (I_D) rated automotive grade MOSFET that is AEC-Q101 qualified. This MOSFET has a drain-source on-state resistance (R_DS(ON)) of 7.52mΩ (max.) with V_GS = -10V, I_D= -20A or 11.3mΩ (max.) with V_GS = -4.5V, I_D = -10A. The total gate charge (Q_g) is 65.0nC (typ.) with V_DD = -15V, I_D = -10A, V_GS = -10V. The ROHM Semiconductor RH7E04BBJFRA is ideal for Advanced Driver Assistance Systems (ADAS), information, lighting, and body applications.