Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 244In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 24In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 165In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 88In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 65In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 83In Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement