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MMBT4401-13-F

Name: Diodes Incorporated MMBT4401-13-F
Brand: Diodes Incorporated
SKU: 621-MMBT4401-13-F
Price: 0.89 DKK
Availability: InStock

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See Product Specifications

Mouser No:

621-MMBT4401-13-F

Mfr. No:

MMBT4401-13-F

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN

Datasheet:

MMBT4401-13-F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated MMBT4401-13-F

In Stock: 130.531

Stock:: 130.531 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+47,00 kr.)

Pricing (DKK)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,895 kr.	0,90 kr.
	0,522 kr.	5,22 kr.
	0,336 kr.	33,60 kr.
	0,254 kr.	127,00 kr.
	0,194 kr.	194,00 kr.
	0,164 kr.	820,00 kr.
Full Reel (Order in multiples of 10000)
	0,112 kr.	1.120,00 kr.
	0,09 kr.	1.800,00 kr.

† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

MMBT4401-7-F

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,90 kr.

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	600 mA
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	750 mV
Pd - Power Dissipation:	310 mW
Gain Bandwidth Product fT:	250 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
DC Collector/Base Gain hFE Min:	20 at 100 uA, 1 V
DC Current Gain hFE Max:	300 at 150 mA, 1 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	10000
Subcategory:	Transistors
Unit Weight:	8 mg

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Filter Document:

Datasheet

MMBT4401-13-F Datasheet (PDF)

PCN

Environmental Compliance (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210075
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MMBT4401 Bipolar Junction Transistor

Diodes Incorporated MMBT4401 Bipolar Junction Transistor (BJT) with epitaxial planar die construction is a 40V NPN small signal transistor. The MMBT4401 is qualified to AEC-Q101 standards for high reliability, available in the SOT23 package. This transistor is constructed from molded plastic "Green" compound and complies with UL94V-0 flammability rating. Diodes Incorporated MMBT4401 features a wide storage and operating temperature range of -55ºC to 150ºC. This BJT is RoHS compliant. The MMBT4401 transistor is ideal for medium power amplification and switching.