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DI006H03SQ

Name: Diotec Semiconductor DI006H03SQ
Brand: Diotec Semiconductor
SKU: 637-DI006H03SQ
Price: 15.14 DKK
Availability: InStock

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Mouser No:

637-DI006H03SQ

Mfr. No:

DI006H03SQ

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SO-8, 30V, 6A, 150C, N+P

Datasheet:

DI006H03SQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diotec Semiconductor DI006H03SQ

In Stock: 3.949

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	15,14 kr.	15,14 kr.
	10,22 kr.	102,20 kr.
	6,93 kr.	693,00 kr.
	5,80 kr.	2.900,00 kr.
Full Reel (Order in multiples of 4000)
	4,77 kr.	19.080,00 kr.
	4,63 kr.	37.040,00 kr.
24.000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A, 4.2 A
Rds On - Drain-Source Resistance:	25 mOhms, 50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 2 V
Qg - Gate Charge:	11.7 nC, 11.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Quad
Fall Time:	8.7 ns, 13.5 ns
Forward Transconductance - Min:	4 S, 3.5 S
Product Type:	MOSFETs
Rise Time:	15 ns, 4.9 ns
Series:	DI0XX
Factory Pack Quantity:	4000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	17.5 ns, 28.2 ns
Typical Turn-On Delay Time:	11.2 ns, 7.5 ns

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Datasheet

DI006H03SQ Datasheet (PDF)

Models

Full Material Declaration (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.