Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Minimum Operating Temperature Maximum Operating Temperature
Microchip Technology APTGX300A170TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.7 kV 1.7 V 300 A 150 nA 1.311 kW - 40 C + 175 C
Microchip Technology APTGX600A120TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.2 kV 1.6 V 600 A 200 nA 2.272 kW - 40 C + 175 C
Microchip Technology APTGX600A170TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.7 kV 1.7 V 600 A 200 nA 2.272 kW - 40 C + 175 C
Microchip Technology APTGX900A120TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.2 kV 1.6 V 900 A 300 nA 3.26 kW - 40 C + 175 C
Microchip Technology APTGX900A170TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.7 kV 1.7 V 900 A 300 nA 3.26 kW - 40 C + 175 C
Microchip Technology APTGX300A120TDP3EG
Microchip Technology IGBT Modules PM-IGBT-TFS-DP3
10Expected 25/01/2027
Min.: 1
Mult.: 1

IGBT Modules Dual 1.2 kV 1.6 V 300 A 150 nA 1.311 kW - 40 C + 175 C