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SUM40014M-GE3

Name: Vishay SUM40014M-GE3
Brand: Vishay / Siliconix
SKU: 78-SUM40014M-GE3
Price: 28.5 DKK
Availability: InStock

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Mouser No:

78-SUM40014M-GE3

Mfr. No:

SUM40014M-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TO263 N-CH 40V 200A

Datasheet:

SUM40014M-GE3 Datasheet

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In Stock: 4.445

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	28,50 kr.	28,50 kr.
	18,87 kr.	188,70 kr.
	13,35 kr.	1.335,00 kr.
	13,28 kr.	6.640,00 kr.
Full Reel (Order in multiples of 800)
	11,64 kr.	9.312,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	990 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	182 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	ThunderFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Fall Time:	35 ns
Forward Transconductance - Min:	140 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	ThunderFET Power MOSFET
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	1,600 g

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Datasheet

SUM40014M-GE3 Datasheet

PCN

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SUM40014M N-Channel 40V MOSFET

Vishay / Siliconix SUM40014M N-Channel 40V MOSFET provides 40V_DS drain-source voltage in a single-configuration D²PAK package with ThunderFET® power. The MOSFET utilizes a lead-free and RoHS-compliant design and is 100% R_g and UIS tested. Vishay / Siliconix SUM40014M N-Channel 40V MOSFET is suitable for use in DC/DC converters, battery management applications, power tools, and motor drive switches.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.