APS6408L-3OC-BA

AP Memory
878-APS6408L-3OC-BA
APS6408L-3OC-BA

Mfr.:

Description:
DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 3V, Ind. Temp., BGA24 (OctaRAM for Renesas RA6M RZ/A SoC)

ECAD Model:
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In Stock: 284

Stock:
284 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
13,43 kr. 13,43 kr.
12,23 kr. 122,30 kr.
11,94 kr. 298,50 kr.
11,71 kr. 585,50 kr.
11,41 kr. 1.141,00 kr.
11,04 kr. 2.760,00 kr.
10,74 kr. 5.370,00 kr.
10,22 kr. 25.550,00 kr.

Product Attribute Attribute Value Select Attribute
AP Memory Technology
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
8 bit
200 MHz
BGA-24
8 M x 8
2.7 V
3.6 V
- 40 C
+ 85 C
IoT RAM
Tray
Brand: AP Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 4800
Subcategory: Memory & Data Storage
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Attributes selected: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
EAR99

APS6408L-3OC-BA DDR Octal SPI PSRAM

AP Memory APS6408L-3OC-BA Double Data Rate (DDR) Octal SPI PSRAM is designed with auto temperature-compensated self-refresh by the built-in temperature sensor and partial array self-refresh. This octal PSRAM features software reset, reset pin, and an ultra-low power half-sleep mode with data retention. The APS6408L-3OC-BA PSRAM offers a clock rate of up to 133MHz 266Mb/s read/write throughput operating within a 2.7V to 3.6V (VDD) single supply voltage range. This octal PSRAM holds 64MB in capacity and is organized in an 8M x 8-bit configuration. It utilizes a page size of 1024 bytes, and the column addresses range from AY0 to AY9, while row addresses span from AX0 to AX12.