ISL81807FRTZ-T

Renesas / Intersil
968-ISL81807FRTZ-T
ISL81807FRTZ-T

Mfr.:

Description:
Switching Controllers 80V Synchronous Dual Boost PWM Controller for GaN, 32LD TQFN

Datasheet:
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In Stock: 2.720

Stock:
2.720 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
82,06 kr. 82,06 kr.
64,01 kr. 640,10 kr.
59,46 kr. 1.486,50 kr.
54,46 kr. 5.446,00 kr.
53,04 kr. 13.260,00 kr.
51,10 kr. 25.550,00 kr.
50,06 kr. 50.060,00 kr.
Full Reel (Order in multiples of 3000)
47,37 kr. 142.110,00 kr.
6.000 Quote

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: Switching Controllers
RoHS:  
Boost
1 Output
100 kHz to 200 MHz
5 V to 80 V
- 40 C
+ 125 C
SMD/SMT
TQFN-32
Reel
Cut Tape
Brand: Renesas / Intersil
Fall Time: 15 ns
Isolation: Non-Isolated
Moisture Sensitive: Yes
Operating Supply Current: 5.5 mA
Operating Supply Voltage: 4.5 V to 80 V
Product: Controller
Product Type: Switching Controllers
Rise Time: 15 ns
Series: ISL81807
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
CNHTS:
8542319099
CAHTS:
8542310000
USHTS:
8542310030
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

ISL81807 80V Dual Synchronous Boost Controller

Renesas Electronics ISL81807 80V Dual Synchronous Boost Controller generates two independent outputs or one output with two interleaved phases for various industrial and general-purpose applications. With broad input/output voltage ranges, the controller is suitable for telecommunications, data centers, and computing applications. The ISL81807 provides a gate driver voltage of 5.3V. With small dead time setting, the controller is perfect for E-mode GaN FET devices.

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