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NVMFWS1D7N04XMT1G

Name: onsemi NVMFWS1D7N04XMT1G
Brand: onsemi
SKU: 863-VMFWS1D7N04XMT1G
Price: 13.28 DKK
Availability: InStock

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Mouser No:

863-VMFWS1D7N04XMT1G

Mfr. No:

NVMFWS1D7N04XMT1G

Mfr.:

onsemi

Description:

MOSFETs 40V T10M IN SO8FL PACKAGE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFWS1D7N04XMT1G Datasheet (PDF)

ECAD Model:

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Learn more about onsemi NVMFWS1D7N04XMT1G

In Stock: 7.977

Stock:: 7.977 Can Dispatch Immediately

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Factory Lead Time:: 42 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	13,28 kr.	13,28 kr.
	8,50 kr.	85,00 kr.
	5,87 kr.	587,00 kr.
	4,98 kr.	2.490,00 kr.
	4,16 kr.	4.160,00 kr.
Full Reel (Order in multiples of 1500)
	3,83 kr.	5.745,00 kr.
	3,63 kr.	10.890,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	154 A
Rds On - Drain-Source Resistance:	1.65 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	75 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	77 S
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	NVMFWS1D7N04XM
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	7 ns

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Datasheet

NVMFWS1D7N04XMT1G Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

NVMFWS1D7N04XM MOSFET

onsemi NVMFWS1D7N04XM MOSFET is a single, N-channel, STD gate MOSFET in a SO8FL package. The device features 40V drain-to-source voltage, 154A continuous drain current, and is AEC-Q101 qualified. The onsemi NVMFWS1D7N04XM MOSFET minimizes driver and conduction losses with low capacitance and R_DS(on). The NVMFWS1D7N04XM is housed in a small footprint of 5mm x 6mm and is ideal for motor drive, battery protection, and synchronous rectification.