NVXK2TR80WDT

onsemi
863-NVXK2TR80WDT
NVXK2TR80WDT

Mfr.:

Description:
MOSFET Modules APM32 SIC H-BRIDGE POWER MODULE

Lifecycle:
New At Mouser
ECAD Model:
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In Stock: 48

Stock:
48 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
This Product Ships FREE

Pricing (DKK)

Qty. Unit Price
Ext. Price
330,85 kr. 330,85 kr.
272,07 kr. 2.720,70 kr.
241,33 kr. 28.959,60 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Modules
RoHS:  
SiC
Through Hole
APM-32
N-Channel
4 Channel
1.2 kV
20 A
116 mOhms
- 15 V, + 25 V
4.3 V
- 40 C
+ 175 C
82 W
NVXK2TR80WDT
Tube
Brand: onsemi
Configuration: Dual Half-Bridge
Fall Time: 9 ns
Height: 5.8 mm
Length: 44.2 mm
Product Type: MOSFET Modules
Rise Time: 12 ns
Factory Pack Quantity: 60
Subcategory: Discrete and Power Modules
Tradename: EliteSiC
Type: Half-Bridge
Typical Turn-On Delay Time: 12 ns
Width: 29 mm
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

NVXK2TR80WDT Silicon Carbide (SiC) Module

onsemi NVXK2TR80WDT Silicon Carbide (SiC) Module is a 1200V, 80mΩ, and 20A dual half-bridge EliteSiC power module housed in a APM32 Dual Inline Package (DIP). This SiC module is compactly designed to have a low total module resistance. The NVXK2TR80WDT power module is automotive-qualified per AEC-Q101 and AQG324. This power module is lead-free, ROHS, and UL94V-0 compliant. The NVXK2TR80WDT EliteSiC MOSFET module is ideally used in HV DC-DC and onboard chargers in xEV applications.