EPC2302

EPC
65-EPC2302
EPC2302

Mfr.:

Description:
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN

Lifecycle:
New At Mouser
Datasheet:
ECAD Model:
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Learn more about EPC EPC2302

In Stock: 14.106

Stock:
14.106 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
50,65 kr. 50,65 kr.
35,06 kr. 350,60 kr.
27,01 kr. 2.701,00 kr.
25,44 kr. 25.440,00 kr.
Full Reel (Order in multiples of 3000)
23,57 kr. 70.710,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
EPC
Product Category: GaN FETs
RoHS:  
SMD/SMT
QFN-7
N-Channel
1 Channel
100 V
133 A
1.8 mOhms
6 V, - 4 V
2.5 V
23 nC
- 40 C
+ 150 C
Enhancement
eGaN FET
Brand: EPC
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: Power Transistor
Product Type: GaN FETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Unit Weight: 31,300 mg
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

EPC2302 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2302 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is engineered for high-frequency DC-DC applications to/from 40V to 60V and 48V BLDC motor drives. This eGaN® FET features 1.8mΩ maximum drain-source on resistance RDS(on) and 100V drain-source breakdown voltage (continuous) VDS in a low inductance 3mm x 5mm QFN package. The package has side-wettable flanks and an exposed top for excellent thermal management. The thermal resistance to the case top is ~0.2°C/W, offering excellent thermal behavior and easy cooling. The EPC2302 enhancement-mode power transistor from EPC enables efficient operation in many topologies while improving efficiency and saving space.

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