It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NXH008T120M3F2PTHG

Name: onsemi NXH008T120M3F2PTHG
Brand: onsemi
SKU: 863-H008T120M3F2PTHG
Price: 1093.11 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-H008T120M3F2PTHG

Mfr. No:

NXH008T120M3F2PTHG

Mfr.:

onsemi

Description:

MOSFET Modules 8M 1200V 40A M3S SIC TNPC MODULE

Datasheet:

NXH008T120M3F2PTHG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NXH008T120M3F2PTHG

In Stock: 28

Stock:: 28 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

This Product Ships FREE

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	1.093,11 kr.	1.093,11 kr.
	1.016,65 kr.	10.166,50 kr.
100	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Package/Case:	PIM-29
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	129 A
Rds On - Drain-Source Resistance:	8.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	371 W
Series:	NXH008T120M3F2PTHG
Packaging:	Tray
Brand:	onsemi
Fall Time:	15 ns
Product Type:	MOSFET Modules
Rise Time:	20.6 ns
Factory Pack Quantity:	20
Subcategory:	Discrete and Power Modules
Tradename:	EliteSiC
Typical Turn-Off Delay Time:	137 ns
Typical Turn-On Delay Time:	41.5 ns
Vf - Forward Voltage:	4.8 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NXH008T120M3F2PTHG Datasheet

TARIC:: 8541290000
CNHTS:: 8504409100
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NXH008T120M3F2PTHG Silicone Carbide (SiC) Module

onsemi NXH008T120M3F2PTHG Silicone Carbide (SiC) Module is a T-type neutral point clamped converter (TNPC) module based on 1200V M3S Planer SiC MOSFETs. NXH008T120M3F2PTHG is optimized for fast-switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This module exhibits optimum performance when driven with a 20V gate drive but also works well with an 18V gate drive.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.