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NTMTS0D7N04CTXG

Name: onsemi NTMTS0D7N04CTXG
Brand: onsemi
SKU: 863-NTMTS0D7N04CTXG
Price: 23.87 DKK
Availability: InStock

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Mouser No:

863-NTMTS0D7N04CTXG

Mfr. No:

NTMTS0D7N04CTXG

Mfr.:

onsemi

Description:

MOSFETs AFSM T6 40V SG NCH

Datasheet:

NTMTS0D7N04CTXG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMTS0D7N04CTXG

In Stock: 1.617

Stock:: 1.617 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	23,87 kr.	23,87 kr.
	15,67 kr.	156,70 kr.
	10,97 kr.	1.097,00 kr.
	9,70 kr.	4.850,00 kr.
Full Reel (Order in multiples of 3000)
	9,03 kr.	27.090,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	420 A
Rds On - Drain-Source Resistance:	670 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	140 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	205 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	20.4 ns
Forward Transconductance - Min:	200 S
Product Type:	MOSFETs
Rise Time:	18.1 ns
Series:	NTMTS0D7N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	28.9 ns
Unit Weight:	319,280 mg

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Datasheet

NTMTS0D7N04CTXG Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMTS0D7N04C 40V N-Channel Power MOSFET

onsemi NTMTS0D7N04C 40V N-Channel Power MOSFET is produced using onsemi’s advanced Power Trench process that incorporates Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a leading soft body diode. The onsemi NTMTS0D7N04C offers 420A continuous drain current (I_D) and a low drain-to-source on-resistance (R_DS(on) of 0.67mΩ (max.).