SISD5300DN-T1-GE3

Vishay / Siliconix
78-SISD5300DN-T1-GE3
SISD5300DN-T1-GE3

Mfr.:

Description:
MOSFETs PPAK1212 N-CH 30V 62A

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In Stock: 4.418

Stock:
4.418 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
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Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
15,37 kr. 15,37 kr.
9,85 kr. 98,50 kr.
6,80 kr. 680,00 kr.
5,40 kr. 2.700,00 kr.
5,21 kr. 5.210,00 kr.
Full Reel (Order in multiples of 3000)
4,50 kr. 13.500,00 kr.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAK 1212-F-8
N-Channel
1 Channel
30 V
198 A
870 uOhms
- 12 V, 16 V
2 V
27 nC
- 55 C
+ 150 C
57 W
Enhancement
Reel
Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 15 ns
Forward Transconductance - Min: 162 S
Product Type: MOSFETs
Rise Time: 90 ns
Series: SISD
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 26 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SiSD5300DN 30V N-Channel MOSFET

Vishay / Siliconix SiSD5300DN 30V N-Channel MOSFET is a TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance. Operating within a -55°C to +150°C junction temperature range, SiSD5300DN features a very low drain-source resistance and gate charge figure of merit (FOM). Applications include DC/DC converters, synchronous rectification, battery management, O-rings, and load switches.

POWERPAK® 1212 MOSFETs

Vishay POWERPAK® 1212 MOSFETs are ideal for switching applications and boast a die-on resistance of approximately 1mΩ and can handle up to 85A. The Vishay POWERPAK 1212 introduces a packaging technology to mitigate the risk of degrading high-performance dies. This package offers ultra-low thermal impedance in a compact design, making it ideal for space-constrained applications.