AFGBG70T65SQDC

onsemi
863-AFGBG70T65SQDC
AFGBG70T65SQDC

Mfr.:

Description:
IGBTs FS4 70A HIGH SPEED CO-PACK WITH SIC DIODE 20A GEN1.5

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 560

Stock:
560 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
51,62 kr. 51,62 kr.
39,99 kr. 399,90 kr.
33,87 kr. 3.387,00 kr.
32,30 kr. 16.150,00 kr.
Full Reel (Order in multiples of 800)
31,85 kr. 25.480,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
SiC
D2PAK-7
SMD/SMT
Single
1.54 V
20 V
75 A
617 W
- 55 C
+ 175 C
AFGBG70T65SQDC
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current Ic Max: 70 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 800
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541290000
USHTS:
8541210095
ECCN:
EAR99

AFGBG70T65SQDC N-Channel Field Stop IV IGBT

onsemi AFGBG70T65SQDC N-Channel Field Stop IV High Speed IGBT uses the novel field stop 4th generation IGBT technology and Generation 1.5 SiC Schottky Diode technology. This 650V collector-to-emitter (VCES) rated IGBT comes in a D2PAK7 package. It is rated at 1.54V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 70A. The onsemi AFGBG70T65SQDC offers optimal performance with both low conduction and switching losses, enabling high efficiency in various applications.