FGHL75T65MQDTx Trench IGBTs

onsemi FGHL75T65MQDTx Trench IGBTs are 4th generation mid-speed IGBTs technology-packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive temperature co-efficient for easy parallel operation, high current capability, smooth and optimized switching, and tight parameter distribution. The FGHL75T65MQDT is built in a TO247-3L package and the FGHL75T65MQDTL4 IGBT is built in a TO247-4L package. These IGBTs are ideal for applications in solar inverters, UPS, ESS, PFC, and converters.

Results: 2
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (DKK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging

onsemi IGBTs IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
Datasheet
432In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C FGHL75T65MQDTL4 Tube

onsemi IGBTs IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode
Datasheet
103In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.45 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C FGHL75T65MQDT Tube