FAD7171MX

onsemi
863-FAD7171MX
FAD7171MX

Mfr.:

Description:
Gate Drivers 600V, 4A, SOIC-8, High-Side Gate Drive IC

ECAD Model:
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In Stock: 1.448

Stock:
1.448 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
10,67 kr. 10,67 kr.
7,83 kr. 78,30 kr.
7,12 kr. 178,00 kr.
6,33 kr. 633,00 kr.
5,95 kr. 1.487,50 kr.
5,73 kr. 2.865,00 kr.
5,54 kr. 5.540,00 kr.
Full Reel (Order in multiples of 2500)
5,14 kr. 12.850,00 kr.
5,09 kr. 38.175,00 kr.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
High-Side
SMD/SMT
SOIC-8
2 Driver
1 Output
10 V
20 V
11 ns
12 ns
- 40 C
+ 125 C
FAD7171MX
Reel
Cut Tape
Brand: onsemi
Input Voltage - Max: 20 V
Input Voltage - Min: 10 V
Maximum Turn-Off Delay Time: 95 ns
Maximum Turn-On Delay Time: 100 ns
Off Time - Max: 95 ns
Operating Supply Current: 105 uA
Output Voltage: 35 mV
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 100 ns
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

FAD7171MX High-Side Automotive Gate Driver IC

onsemi FAD7171MX High-Side Automotive Gate Driver IC is a 600V, 4A monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. The onsemi FAD7171MX features a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. onsemi’s high-voltage process and common-mode noise cancelling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-13V (typical) for VBS=15V. The Under Voltage Lock Out (UVLO) circuit prevents malfunction when VBS is lower than the specified threshold voltage.