IRF100B201

Infineon Technologies
942-IRF100B201
IRF100B201

Mfr.:

Description:
MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg

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In Stock: 4.840

Stock:
4.840 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
18,05 kr. 18,05 kr.
8,95 kr. 89,50 kr.
8,06 kr. 806,00 kr.
6,54 kr. 3.270,00 kr.
6,39 kr. 6.390,00 kr.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
192 A
4.2 mOhms
- 20 V, 20 V
2 V
170 nC
- 55 C
+ 175 C
441 W
Enhancement
StrongIRFET
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 100 ns
Forward Transconductance - Min: 278 S
Product Type: MOSFETs
Rise Time: 97 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 17 ns
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

IRF100x201 HEXFET™ Power MOSFETs

Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.