LSIC1MO120G0040

IXYS
576-LSIC1MO120G0040
LSIC1MO120G0040

Mfr.:

Description:
SiC MOSFETs SiC MOSFET 1200V 40mO TO247-4L

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In Stock: 423

Stock:
423 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 423 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
189,04 kr. 189,04 kr.
156,21 kr. 1.562,10 kr.
143,61 kr. 14.361,00 kr.
141,37 kr. 63.616,50 kr.

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
70 A
50 mOhms
- 5 V, + 20 V
4 V
175 nC
- 55 C
+ 175 C
357 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 8 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 9 ns
Series: LSIC1MO120G0xxx
Factory Pack Quantity: 450
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 13 ns
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

LSIC1MO120G0x N-Channel SiC MOSFETs

IXYS LSIC1MO120G0x N-Channel SiC MOSFETs offer a 1200V drain-source voltage rating, 25mΩ to 160mΩ resistance range, and 14A to 70A currents. These MOSFETs are optimized for high-frequency, high-efficiency applications, and feature ultra-low on-resistance, low gate resistance, and normally-off operations at all temperatures. The IXYS LSIC1MO120G0x N-Channel SiC MOSFETs are ideal for solar inverters, switch-mode power supplies, motor drives, battery chargers, and more.