LMG2656RFBR

Texas Instruments
595-LMG2656RFBR
LMG2656RFBR

Mfr.:

Description:
Gate Drivers 650V 230mohm GaN ha lf-bridge with integ

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Texas Instruments LMG2656RFBR

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.000
Expected 05/03/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (DKK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
78,63 kr. 78,63 kr.
61,17 kr. 611,70 kr.
58,26 kr. 1.456,50 kr.
50,65 kr. 5.065,00 kr.
48,34 kr. 12.085,00 kr.
44,09 kr. 22.045,00 kr.
38,64 kr. 38.640,00 kr.
Full Reel (Order in multiples of 2000)
37,67 kr. 75.340,00 kr.
† A MouseReel™ fee of 47,00 kr. will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge
SMD/SMT
VQFN-19
10 V
26 V
- 40 C
+ 125 C
LMG2656
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Development Kit: LMG2656EVM-102
Input Voltage - Max: 26 V
Maximum Turn-On Delay Time: 150 ns
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 230 mOhms
Shutdown: No Shutdown
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG2656 650V GaN Power-FET Half Bridge

Texas Instruments LMG2656 650V GaN Power-FET Half Bridge simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm by 8mm QFN package. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to PCB power ground.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.