It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVBG070N120M3S

Name: onsemi NVBG070N120M3S
Brand: onsemi
SKU: 863-NVBG070N120M3S
Price: 98.77 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVBG070N120M3S

Mfr. No:

NVBG070N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3

Datasheet:

NVBG070N120M3S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVBG070N120M3S

In Stock: 1.559

Stock:: 1.559 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	98,77 kr.	98,77 kr.
	69,68 kr.	696,80 kr.
	63,41 kr.	6.341,00 kr.
Full Reel (Order in multiples of 800)
	63,34 kr.	50.672,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	172 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	8.8 ns
Forward Transconductance - Min:	12 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	12 ns
Series:	NVBG070N120M3S
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	11 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVBG070N120M3S Datasheet

PCN

Product Change Notification 2025-9-26 (PDF)

CNHTS:: 8541290000
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

NVBG070N120M3S Silicon Carbide (SiC) MOSFET

onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET is a 1200V M3S planar EliteSiC MOSFET designed for fast switching applications. This MOSFET offers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive. The NVBG070N120M3S SiC MOSFET features a 57nC ultra-low gate charge, 57pF high-speed switching with low capacitance, and 65mΩ typical drain-to-source ON resistance at V_GS=18V. This MOSFET is 100% Avalanche tested, AEC-Q101 qualified, and PPAP capable. The NVBG070N120M3S SiC MOSFET is available in a D2PAK-7L package and is Lead-free 2LI (on second-level interconnection) and RoHS compliant (with exemption 7a). Typical applications include automotive on-board chargers and DC/DC converters for EV/HEV.