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RJ1N04BBHTL1

Name: ROHM Semiconductor RJ1N04BBHTL1
Brand: ROHM Semiconductor
SKU: 755-RJ1N04BBHTL1
Price: 27.3 DKK
Availability: InStock

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See Product Specifications

Mouser No:

755-RJ1N04BBHTL1

Mfr. No:

RJ1N04BBHTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 80V 100A, TO-263AB, Power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RJ1N04BBHTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RJ1N04BBHTL1

In Stock: 772

Stock:: 772 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	27,30 kr.	27,30 kr.
	17,98 kr.	179,80 kr.
	13,50 kr.	1.350,00 kr.
	11,94 kr.	5.970,00 kr.
Full Reel (Order in multiples of 800)
	10,59 kr.	8.472,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	5.3 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	38 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	30 ns

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Datasheet

RJ1N04BBHTL1 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RJ1N04BBH N-Ch Power MOSFET

ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET offers an 80V drain-source voltage with low on-resistance. The device features a ±100A continuous drain current and 89W power dissipation. The RJ1N04BBH is suitable for many applications, including switching, motor drives, and DC/DC converters. The ROHM RJ1N04BBH MOSFET is available in a high-power TO263AB package.

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I²C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I²C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.