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NTTFS1D8N02P1E

Name: onsemi NTTFS1D8N02P1E
Brand: onsemi
SKU: 863-NTTFS1D8N02P1E
Price: 20.74 DKK
Availability: InStock

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Mouser No:

863-NTTFS1D8N02P1E

Mfr. No:

NTTFS1D8N02P1E

Mfr.:

onsemi

Description:

MOSFETs FET 25V 1.8 MOHM PC33 SINGLE

Datasheet:

NTTFS1D8N02P1E Datasheet

ECAD Model:

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In Stock: 501

Stock:: 501 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	20,74 kr.	20,74 kr.
	13,50 kr.	135,00 kr.
	9,40 kr.	940,00 kr.
	8,06 kr.	4.030,00 kr.
	7,68 kr.	7.680,00 kr.
Full Reel (Order in multiples of 3000)
	7,53 kr.	22.590,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	150 A
Rds On - Drain-Source Resistance:	1.3 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	17.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Series:	NTTFS1D8N02P1E
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	122,136 mg

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Datasheet

NTTFS1D8N02P1E Datasheet

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NTTFS1D8N02P1E N-Channel Power MOSFET

onsemi NTTFS1D8N02P1E N-Channel Power MOSFET features a compact design and good thermal performance. This MOSFET offers low drain-to-source resistance (R_DS(on)) to minimize conduction losses and low total gate charge (Q_G) and capacitance to minimize driver losses. onsemi NTTFS1D8N02P1E MOSFET provides 25V drain-to-source voltage (V_(BR)DSS) and 150A maximum drain current (I_D). Typical applications include DC-DC converters, power load switches, notebook battery management, motor control, secondary rectification, battery management, and Point of Load (POL).