SIHR080N60E-T1-GE3

Vishay / Siliconix
78-SIHR080N60ET1GE3
SIHR080N60E-T1-GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 600V

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In Stock: 2.212

Stock:
2.212 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- kr.
Ext. Price:
-,-- kr.
Est. Tariff:

Pricing (DKK)

Qty. Unit Price
Ext. Price
45,95 kr. 45,95 kr.
32,97 kr. 329,70 kr.
25,07 kr. 2.507,00 kr.
23,57 kr. 23.570,00 kr.
Full Reel (Order in multiples of 2000)
22,31 kr. 44.620,00 kr.
21,26 kr. 85.040,00 kr.

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-8
N-Channel
1 Channel
600 V
51 A
74 mOhms
- 30 V, 30 V
5 V
42 nC
- 55 C
+ 150 C
500 W
Enhancement
PowerPAK
Reel
Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 4.6 S
Product Type: MOSFETs
Rise Time: 96 ns
Series: SIHR E
Factory Pack Quantity: 2000
Subcategory: Transistors
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 31 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SiHR080N60E N-Channel Power MOSFET

Vishay / Siliconix  SiHR080N60E N-Channel Power MOSFET is a  fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC. This results in reduced conduction and switching losses, thereby saving energy and increasing efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix  SiHR080N60E  is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.