It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMJD010N10MCLTWG

Name: onsemi NVMJD010N10MCLTWG
Brand: onsemi
SKU: 863-VMJD010N10MCLTWG
Price: 21.63 DKK
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-VMJD010N10MCLTWG

Mfr. No:

NVMJD010N10MCLTWG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V N-CH LL IN LFPA

Datasheet:

NVMJD010N10MCLTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMJD010N10MCLTWG

In Stock: 2.297

Stock:: 2.297 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- kr.

Ext. Price:

-,-- kr.

Est. Tariff:

Pricing (DKK)

Qty.	Unit Price	Ext. Price
	21,63 kr.	21,63 kr.
	15,96 kr.	159,60 kr.
	11,12 kr.	1.112,00 kr.
	9,40 kr.	4.700,00 kr.
Full Reel (Order in multiples of 3000)
	6,65 kr.	19.950,00 kr.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	10 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	26.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	84 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Dual
Fall Time:	28 ns
Forward Transconductance - Min:	61 S
Product Type:	MOSFETs
Rise Time:	32 ns
Series:	NVMJD010N10MCL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	8 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMJD010N10MCLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMJD010N10MCL Power MOSFET

onsemi NVMJD010N10MCL Power MOSFET is a dual, N-Channel MOSFET designed for compact and efficient designs, including high thermal performance. This power MOSFET operates at 100V drain-to-source voltage, 10mΩ drain resistance, and 62A continuous drain current. The NVMJD010N10MCL MOSFET features low total gate charge (Q_G) and capacitance to minimize driver losses. This MOSFET comes in a 5mm x 6mm flat lead package and is an AEC-Q101-qualified MOSFET. The device is Pb-free, halogen-free/BFR-free, Beryllium-free, and RoHS-compliant. This power MOSFET is ideal for solenoid drivers low side/high side drivers, automotive engine controllers, and antilock braking systems.