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RF4G100BGTCR

Name: ROHM Semiconductor RF4G100BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF4G100BGTCR
Price: 8.8 DKK
Availability: InStock

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Mouser No:

755-RF4G100BGTCR

Mfr. No:

RF4G100BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN2020 N-CH 40V 10A

Datasheet:

RF4G100BGTCR Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor RF4G100BGTCR

In Stock: 8.342

Stock:: 8.342 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (DKK)

Qty.	Unit Price	Ext. Price
	8,80 kr.	8,80 kr.
	5,54 kr.	55,40 kr.
	3,67 kr.	367,00 kr.
	2,86 kr.	1.430,00 kr.
	2,61 kr.	2.610,00 kr.
Full Reel (Order in multiples of 3000)
	2,33 kr.	6.990,00 kr.
	2,28 kr.	13.680,00 kr.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	14.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	10.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4.5 ns
Forward Transconductance - Min:	5.2 S
Product Type:	MOSFETs
Rise Time:	6.5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	8.5 ns
Part # Aliases:	RF4G100BG

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Datasheet

RF4G100BGTCR Datasheet

Specification Sheets

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

RF4G100BG N-Channel Power MOSFET

ROHM Semiconductor RF4G100BG N-Channel Power MOSFET is a 40V, 10A MOSFET featuring a low 14.2mΩ on-resistance, making it ideal for switching applications. The RF4G100BG has a 27ns (typical) reverse recovery time and an 18nC (typical) reverse recovery charge. Power dissipation for the device is 2.0W, and it features a wide -55℃ to +150℃ operating junction and storage temperature range.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.